
* Изображения служат только для ознакомления,
см. техническую документацию
130 руб.
Mosfet D718
Добавить в корзину 50шт. на сумму 2 200 руб.
Артикул:SIHF8N50D-E3
Описание
D718 datasheet, D718 pdf, D718 data sheet, datasheet, data sheet, pdf. 4pcs/lot 2SD718 2SB688 Transistor (2 x D718 + 2 x B688) Best Quality in Stock. 1pair (2pcs) Original 2SB688 & 2SD718 KEC Transistor B688 & D718 New Hot. Hilitchi 24-Values 2N2222-S9018 / BC327-BC558 NPN PNP Power General Purpose Transistors Assortment Kit - Pack of 840. 4.6 out of 5 stars 108. 3 reviews for 1200W Gold Pro Series Stereo Mosfet Board (113) Rated 5 out of 5. Jaspal – February 14, 2020. Can I use 12inch x 2 Speaker 4omhs with this board. Ram – February 28, 2020. Transistor b688 datasheet. Silicon PNP Power Transistors. Mospec Semiconductor. POWER TRANSISTORS (8A,120V,80W) Search Partnumber: Start with 'B68 8 ' - Total: 25 ( 1/2 Page) Edal Industries, Inc. Silicon Bridge Rectifier.

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

Технические параметры
| Максимальная рабочая температура | +150 °C |
| Количество элементов на ИС | 1 |
| Длина | 10.63mm |
| Transistor Configuration | Одинарный |
| Brand | Vishay |
| Максимальный непрерывный ток стока | 8.7 A |
| Тип корпуса | TO-220FP |
| Maximum Power Dissipation | 33 W |
| Series | D Series |
| Тип монтажа | Монтаж на плату в отверстия |
| Minimum Operating Temperature | -55 °C |
| Width | 4.83mm |
| Height | 9.8mm |
| Minimum Gate Threshold Voltage | 3V |
| Максимальное сопротивление сток-исток | 850 mΩ |
| Максимальное напряжение сток-исток | 500 V |
| Pin Count | 3 |
| Типичный заряд затвора при Vgs | 15 nC @ 10 V |
| Transistor Material | Кремний |
| Channel Mode | Поднятие |
| Тип канала | N |
| Максимальное напряжение затвор-исток | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Length | 10.63mm |
| Transistor Configuration | Single |
| Brand | Vishay |
| Maximum Continuous Drain Current | 8.7 A |
| Package Type | TO-220FP |
| Maximum Power Dissipation | 33 W |
| Series | D Series |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | -55 °C |
| Width | 4.83mm |
| Minimum Gate Threshold Voltage | 3V |
| Height | 9.8mm |
| Maximum Drain Source Resistance | 850 mΩ |
| Maximum Drain Source Voltage | 500 V |
| Pin Count | 3 |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V |
| Transistor Material | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Gate Source Voltage | -30 V, +30 V |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Lead Shape | Through Hole |
| Tab | Tab |
| Package Height | 16.12(Max) |
| Package Width | 4.83(Max) |
| Package Length | 10.63(Max) |
| Mounting | Through Hole |
| PCB changed | 3 |
| Product Category | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Continuous Drain Current (A) | 8.7 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain Source Resistance (mOhm) | 850@10V |
| Typical Gate Charge @ Vgs (nC) | 15@10V |
| Typical Gate Charge @ 10V (nC) | 15 |
| Typical Input Capacitance @ Vds (pF) | 527@100V |
| Maximum Power Dissipation (mW) | 33000 |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 16 |
| Typical Turn-Off Delay Time (ns) | 17 |
| Typical Turn-On Delay Time (ns) | 13 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Automotive | No |
| Supplier Package | TO-220FP |
| Pin Count | 3 |
| Standard Package Name | TO-220 |
| Military | No |
Дополнительная информация
Datasheet SIHF8N50D-E3
Сроки доставки
Harga Mosfet D718
Выберите регион, чтобы увидеть способы получения товара.
Цена и наличие в магазинах
| Quick jump to: 1N2N2SA2SC74ADBABCBDBFBUCXAHCFIRFKAKIALALMMCNESTSTKTDATLUA |
| Datasheets found :: 13 | Page: | 1 | |
| Nr. | Part Name | Description | Manufacturer |
| 1 | 2SD718 | POWER TRANSISTORS(8A,120V,80W) | MOSPEC Semiconductor |
| 2 | 2SD718 | Silicon NPN Power Transistors TO-3P(I) package | Savantic |
| 3 | 2SD718 | NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) | Wing Shing Computer Components |
| 4 | AD7183 | Advanced Video Decoder with 10-Bit ADC and Component Input Support | Analog Devices |
| 5 | BD71801GWL | Power Management LSI for Mobile Phone | ROHM |
| 6 | BD71801GWL-E2 | Power Management LSI for Mobile Phone | ROHM |
| 7 | BD7185AGWL | Power Management LSI for Mobile Phone | ROHM |
| 8 | BD7185AGWL-E2 | Power Management LSI for Mobile Phone | ROHM |
| 9 | ESD7181MU | Low Capacitance Transient Voltage Suppressors | ON Semiconductor |
| 10 | KTD718 | General Purpose Transistor | Korea Electronics (KEC) |
| 11 | KTD718B | General Purpose Transistor | Korea Electronics (KEC) |
| 12 | ZXTD718MC | Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors | Diodes |
| 13 | ZXTD718MCTA | Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors | Diodes |
| Datasheets found :: 13 | Page: | 1 | |