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130 руб.
Mosfet D718
Добавить в корзину 50шт. на сумму 2 200 руб.
Артикул:SIHF8N50D-E3
Описание
D718 datasheet, D718 pdf, D718 data sheet, datasheet, data sheet, pdf. 4pcs/lot 2SD718 2SB688 Transistor (2 x D718 + 2 x B688) Best Quality in Stock. 1pair (2pcs) Original 2SB688 & 2SD718 KEC Transistor B688 & D718 New Hot. Hilitchi 24-Values 2N2222-S9018 / BC327-BC558 NPN PNP Power General Purpose Transistors Assortment Kit - Pack of 840. 4.6 out of 5 stars 108. 3 reviews for 1200W Gold Pro Series Stereo Mosfet Board (113) Rated 5 out of 5. Jaspal – February 14, 2020. Can I use 12inch x 2 Speaker 4omhs with this board. Ram – February 28, 2020. Transistor b688 datasheet. Silicon PNP Power Transistors. Mospec Semiconductor. POWER TRANSISTORS (8A,120V,80W) Search Partnumber: Start with 'B68 8 ' - Total: 25 ( 1/2 Page) Edal Industries, Inc. Silicon Bridge Rectifier.
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
Технические параметры
Максимальная рабочая температура | +150 °C |
Количество элементов на ИС | 1 |
Длина | 10.63mm |
Transistor Configuration | Одинарный |
Brand | Vishay |
Максимальный непрерывный ток стока | 8.7 A |
Тип корпуса | TO-220FP |
Maximum Power Dissipation | 33 W |
Series | D Series |
Тип монтажа | Монтаж на плату в отверстия |
Minimum Operating Temperature | -55 °C |
Width | 4.83mm |
Height | 9.8mm |
Minimum Gate Threshold Voltage | 3V |
Максимальное сопротивление сток-исток | 850 mΩ |
Максимальное напряжение сток-исток | 500 V |
Pin Count | 3 |
Типичный заряд затвора при Vgs | 15 nC @ 10 V |
Transistor Material | Кремний |
Channel Mode | Поднятие |
Тип канала | N |
Максимальное напряжение затвор-исток | -30 V, +30 V |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Length | 10.63mm |
Transistor Configuration | Single |
Brand | Vishay |
Maximum Continuous Drain Current | 8.7 A |
Package Type | TO-220FP |
Maximum Power Dissipation | 33 W |
Series | D Series |
Mounting Type | Through Hole |
Minimum Operating Temperature | -55 °C |
Width | 4.83mm |
Minimum Gate Threshold Voltage | 3V |
Height | 9.8mm |
Maximum Drain Source Resistance | 850 mΩ |
Maximum Drain Source Voltage | 500 V |
Pin Count | 3 |
Typical Gate Charge @ Vgs | 15 nC @ 10 V |
Transistor Material | Si |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Gate Source Voltage | -30 V, +30 V |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Lead Shape | Through Hole |
Tab | Tab |
Package Height | 16.12(Max) |
Package Width | 4.83(Max) |
Package Length | 10.63(Max) |
Mounting | Through Hole |
PCB changed | 3 |
Product Category | Power MOSFET |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 500 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Gate Threshold Voltage (V) | 5 |
Maximum Continuous Drain Current (A) | 8.7 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (mOhm) | 850@10V |
Typical Gate Charge @ Vgs (nC) | 15@10V |
Typical Gate Charge @ 10V (nC) | 15 |
Typical Input Capacitance @ Vds (pF) | 527@100V |
Maximum Power Dissipation (mW) | 33000 |
Typical Fall Time (ns) | 11 |
Typical Rise Time (ns) | 16 |
Typical Turn-Off Delay Time (ns) | 17 |
Typical Turn-On Delay Time (ns) | 13 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Automotive | No |
Supplier Package | TO-220FP |
Pin Count | 3 |
Standard Package Name | TO-220 |
Military | No |
Дополнительная информация
Datasheet SIHF8N50D-E3
Сроки доставки
Harga Mosfet D718
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Datasheets found :: 13 | Page: | 1 | |
Nr. | Part Name | Description | Manufacturer |
1 | 2SD718 | POWER TRANSISTORS(8A,120V,80W) | MOSPEC Semiconductor |
2 | 2SD718 | Silicon NPN Power Transistors TO-3P(I) package | Savantic |
3 | 2SD718 | NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) | Wing Shing Computer Components |
4 | AD7183 | Advanced Video Decoder with 10-Bit ADC and Component Input Support | Analog Devices |
5 | BD71801GWL | Power Management LSI for Mobile Phone | ROHM |
6 | BD71801GWL-E2 | Power Management LSI for Mobile Phone | ROHM |
7 | BD7185AGWL | Power Management LSI for Mobile Phone | ROHM |
8 | BD7185AGWL-E2 | Power Management LSI for Mobile Phone | ROHM |
9 | ESD7181MU | Low Capacitance Transient Voltage Suppressors | ON Semiconductor |
10 | KTD718 | General Purpose Transistor | Korea Electronics (KEC) |
11 | KTD718B | General Purpose Transistor | Korea Electronics (KEC) |
12 | ZXTD718MC | Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors | Diodes |
13 | ZXTD718MCTA | Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors | Diodes |
Datasheets found :: 13 | Page: | 1 | |