- AO4468: 30V N-Channel MOSFET: Guangdong Kexin Industr. AO4468: N-Channel MOSFET: shenzhen wanhexing Elec. AO4468: 30V N-Channel MOSFET: VBsemi Electronics Co. AO4468: N-Channel 20V (D-S) MOSFET: Alpha & Omega Semicondu. AO4468: N-Channel Enhancement Mode Field Effect Transistor: AO4468L 30V N-Channel MOSFET: AO4468L N-Channel.
- Order today, ships today. AO4468 – N-Channel 30V 10.5A (Ta) 3.1W (Ta) Surface Mount 8-SOIC from Alpha & Omega Semiconductor Inc. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
Type Designator: AO4468
Type of Transistor: MOSFET
AO4468: 30V N-Channel MOSFET: Guangdong Kexin Industr. AO4468: N-Channel MOSFET: shenzhen wanhexing Elec. AO4468: 30V N-Channel MOSFET: VBsemi Electronics Co. AO4468: N-Channel 20V (D-S) MOSFET: Alpha & Omega Semicondu. AO4468: N-Channel Enhancement Mode Field Effect Transistor: AO4468L 30V N-Channel MOSFET: AO4468L N-Channel. 30V N-Channel MOSFET, AO4468 datasheet, AO4468 circuit, AO4468 data sheet: WHXPCB, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3.1 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V
Maximum Drain Current |Id|: 10.5 A
Maximum Junction Temperature (Tj): 150 °C
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Rise Time (tr): 3.5 nS
Drain-Source Capacitance (Cd): 110 pF
Maximum Drain-Source On-State Resistance (Rds): 0.017 Ohm
Package: SO-8
AO4468 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
Ao4468 Mosfet Wiring
AO4468 Datasheet (PDF)
0.1. ao4468.pdf Size:315K _aosemi
AO446830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4468 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 10.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
0.2. ao4468.pdf Size:1303K _kexin
SMD Type MOSFETN-Channel MOSFETAO4468 (KO4468)SOP-8 Features VDS (V) = 30V1.50 0.15 ID = 10.5 A (VGS = 10V) RDS(ON) 17m (VGS = 10V)1 Source 5 Drain RDS(ON) 23m (VGS = 4.5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gat
9.1. ao4466.pdf Size:324K _aosemi
AO446630V N-Channel MOSFETGeneral Description Product SummaryThe AO4466 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V)device is suitable for use as a load switch or in PWM RDS(ON)
9.2. ao4466l.pdf Size:199K _aosemi
AO4466N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4466/L uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. ThisID = 9.4A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)
9.3. ao4466.pdf Size:1389K _kexin
SMD Type MOSFETN-Channel MOSFETAO4466 (KO4466)SOP-8 Features VDS (V) = 30V ID = 9.4 A (VGS = 10V)1.50 0.15 RDS(ON) 23m (VGS = 10V) RDS(ON) 35m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate
Datasheet: AO4449, AO4450, AO4452, AO4453, AO4454, AO4455, AO4459, AO4466, BF245A, AO4476A, AO4478, AO4480, AO4482, AO4484, AO4485, AO4486, AO4488.
Ao4468 Mosfet Diagram
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Ao4468 Mosfet Regulator
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Ao4468 Mosfet Datasheet